maximum ratings* t a = 25 unless otherwise noted symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current -continuous 600 ma p c collector dissipation 300 mw t j , t stg junction and storage temperature -55to+150 electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 10 a i e =0 75 v collector-emitter breakdown voltage v (br)ceo i c = 10ma i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a i c =0 6 v collector cut-off current i cbo v cb =70 v , i e =0 0.1 a collector cut-off current i cex v ce =60v , v be(off) =3v 0.1 a emitter cut-off current i ebo v eb = 3v , i c =0 0.1 a h fe(1) v ce =10v, i c = 150ma 100 300 h fe(2) v ce =10v, i c = 0.1ma 40 dc current gain h fe(3) v ce =10v, i c = 500ma 42 collector-emitter saturation voltage v ce (sat) i c =500 ma, i b = 50ma i c =150 ma, i b =15ma 0.6 0.3 v base-emitter saturation voltage v be (sat) i c =500 ma, i b = 50ma 1.2 v transition frequency f t v ce =20v, i c = 20ma f= 100mhz 300 mhz delay time t d 10 ns rise time t r v cc =30v, v be(off) =-0.5v i c =150ma , i b1 = 15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 =-i b2 =15ma 60 ns sot-23 marking: 1p fea tures y epitaxial planar die construction y complemen ta ry pnp type available(fmmbt2907a) 1. base 2.emitter 3.collector FMBT2222A FMBT2222A npn bipolar transistor dimension in mm mechanical dimensions description
classification of h fe(1) rank l h range 100-200 200-300 f FMBT2222A npn bipolar transistor
FMBT2222A npn bipolar transistor
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